Compact Model of Dual-Drain MAGFETs Simulation
نویسندگان
چکیده
This work offers a study of new simple compact model of dual-drain Magnetic Field Effect Transistor (MAGFET) including geometrical effects and biasing dependency. An explanation of the sensitivity is investigated, involving carrier deflection as the dominant operating principle. Finally, model verification with simulation results is introduced to ensure that acceptable error of 2% is achieved. Keywords—MAGFET, Modeling, Simulation, Split-drain.
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